Misplaced Pages

This is an old revision of this page, as edited by Maxim Masiutin (talk | contribs) at 22:24, 6 March 2024 (Added s2cid. | Use this tool. Report bugs. | #UCB_Gadget). The present address (URL) is a permanent link to this revision, which may differ significantly from the current revision.

Zinc nitride

Identifiers
CAS Number	1313-49-1
3D model (JSmol)	Interactive image
ECHA InfoCard	100.013.826
EC Number	215-207-3
PubChem CID	12130759
UNII	7OOJ6UE14L
CompTox Dashboard (EPA)	DTXSID001014317
InChI InChI=1S/2N.3Zn/q2*-1;;;+2Key: AKJVMGQSGCSQBU-UHFFFAOYSA-N
SMILES =.=.
Properties
Chemical formula	Zn3N2
Molar mass	224.154 g/mol
Appearance	blue-gray cubic crystals
Density	6.22 g/cm, solid
Melting point	decomposes 700°C
Solubility in water	insoluble, reacts
Structure
Crystal structure	Cubic, cI80
Space group	Ia-3, No. 206
Hazards
GHS labelling:
Pictograms
Signal word	Warning
Hazard statements	H315, H319
Precautionary statements	P264, P280, P302+P352, P305+P351+P338, P321, P332+P313, P337+P313, P362
NFPA 704 (fire diamond)	1 0 2W
Except where otherwise noted, data are given for materials in their standard state (at 25 °C , 100 kPa). Y verify (what is  ?) Infobox references

Zinc nitride (Zn₃N₂) is an inorganic compound of zinc and nitrogen, usually obtained as (blue)grey crystals. It is a semiconductor. In pure form, it has the anti-bixbyite structure.

Chemical properties

Zinc nitride can be obtained by thermally decomposing zincamide (zinc diamine) in an anaerobic environment, at temperatures in excess of 200 °C. The by-product of the reaction is ammonia.

3Zn(NH₂)₂ → Zn₃N₂ + 4NH₃

It can also be formed by heating zinc to 600 °C in a current of ammonia; the by-product is hydrogen gas.

3Zn + 2NH₃ → Zn₃N₂ + 3H₂

The decomposition of Zinc Nitride into the elements at the same temperature is a competing reaction. At 700 °C Zinc Nitride decomposes. It has also been made by producing an electric discharge between zinc electrodes in a nitrogen atmosphere. Thin films have been produced by chemical vapour deposition of Bis(bis(trimethylsilyl)amido]zinc with ammonia gas onto silica or ZnO coated alumina at 275 to 410 °C.

The crystal structure is anti-isomorphous with Manganese(III) oxide. (bixbyite). The heat of formation is c. 24 kilocalories (100 kJ) per mol. It is a semiconductor with a reported bandgap of c. 3.2eV, however, a thin zinc nitride film prepared by electrolysis of molten salt mixture containing Li₃N with a zinc electrode showed a band-gap of 1.01 eV.

Zinc nitride reacts violently with water to form ammonia and zinc oxide.

Zn₃N₂ + 3H₂O → 3ZnO + 2NH₃

Zinc nitride reacts with lithium (produced in an electrochemical cell) by insertion. The initial reaction is the irreversible conversion into LiZn in a matrix of beta-Li₃N. These products then can be converted reversibly and electrochemically into LiZnN and metallic Zn.

See also

• Nitride
• Zinc nitrate

References

1. ^ CRC Handbook of Chemistry and Physics (96 ed.), §4-100 Physical Constants of Inorganic Compounds
2. ^ Partin, D. E.; Williams, D. J.; O'Keeffe, M. (1997). "The Crystal Structures of Mg₃N₂ and Zn₃N₂". Journal of Solid State Chemistry. 132 (1): 56–59. Bibcode:1997JSSCh.132...56P. doi:10.1006/jssc.1997.7407.
3. ^ Roscoe, H. E.; Schorlemmer, C. (1907) . A Treatise on Chemistry: Volume II, The Metals (4th ed.). London: Macmillan. pp. 650–651. Retrieved 2007-11-01.
4. ^ Bloxam, C. L. (1903). Chemistry, Inorganic and Organic (9th ed.). Philadelphia: P. Blakiston's Son & Co. p. 380. Retrieved 2007-10-31.
5. Lowry, M. T. (1922). Inorganic Chemistry. Macmillan. p. 872. Retrieved 2007-11-01.
6. ^ Maxtead, E.B. (1921), Ammonia and the Nitrides, pp. 69–20
7. ^ Mellor, J.W. (1964), A Comprehensive Treatise on Inorganic and Theoretical Chemistry, vol. 8, Part 1, pp. 160–161
8. Maile, E.; Fischer, R. A. (Oct 2005), "MOCVD of the Cubic Zinc Nitride Phase, Zn3N2, Using Zn2 and Ammonia as Precursors", Chemical Vapor Deposition, 11 (10): 409–414, doi:10.1002/cvde.200506383
9. Ebru, S.T.; Ramazan, E.; Hamide, K. (2007), "Structural and Optical Properties of Zinc Nitride Films Prepared by Pulsed Filtered Cathodic Vacuum Arc Deposition" (PDF), Chin. Phys. Lett., 24 (12): 3477, Bibcode:2007ChPhL..24.3477S, doi:10.1088/0256-307x/24/12/051, S2CID 123496085
10. Toyoura, Kazuaki; Tsujimura, Hiroyuki; Goto, Takuya; Hachiya, Kan; Hagiwara, Rika; Ito, Yasuhiko (2005), "Optical properties of zinc nitride formed by molten salt electrochemical process", Thin Solid Films, 492 (1–2): 88–92, Bibcode:2005TSF...492...88T, doi:10.1016/j.tsf.2005.06.057
11. Amatucci, G. G.; Pereira, N. (2004). "Nitride and Silicide Negative Electrodes". In Nazri, G.-A.; Pistoia, G. (eds.). Lithium Batteries: Science and Technology. Kluwer Academic Publishers. p. 256. ISBN 978-1-4020-7628-2. Retrieved 2007-11-01.
12. Pereiraa, N.; Klein, L.C.; Amatuccia, G.G. (2002), "The Electrochemistry of Zn3 N 2 and LiZnN - A Lithium Reaction Mechanism for Metal Nitride Electrodes", Journal of the Electrochemical Society, 149 (3): A262, Bibcode:2002JElS..149A.262P, doi:10.1149/1.1446079

Further reading

• Futsuhara, M.; Yoshioka, K.; Takai, O. (1998). "Structural, electrical and optical properties of zinc nitride thin films prepared by reactive RF magnetron sputtering". Thin Solid Films. 322 (1): 274–281. Bibcode:1998TSF...322..274F. doi:10.1016/S0040-6090(97)00910-3.
• Lyutaya, M. D.; Bakuta, S. A. (1980). "Synthesis of the nitrides of Group II elements". Powder Metallurgy and Metal Ceramics. 19 (2): 118–122. doi:10.1007/BF00792038. S2CID 93036462.
• Wu, P.; Tiedje, T. (2016). "Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films". Semiconductor Science and Technology. 31 (10): 1–4. Bibcode:2016SeScT..31jLT01W. doi:10.1088/0268-1242/31/10/10LT01. S2CID 99713171.

External links

• Material Safety Data Sheet from GFS Chemicals

• Nitrides
• Zinc compounds
• II-V compounds
• II-V semiconductors