Model solid approximation - Misplaced Pages

Electronic structure methods
Valence bond theory
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Molecular orbital theory
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Density functional theory
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Electronic band structure
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The model solid approximation is a method used for determining the extrema of energy bands in semiconductors. The method was first proposed for silicon-germanium alloys by Chris G. Van de Walle and Richard M. Martin in 1986 and extended to several other semiconductor materials by Van de Walle in 1989. It has been used extensively for modelling semiconductor heterostructure devices such as quantum cascade lasers.

Although the electrostatic potential in a semiconductor crystal fluctuates on an atomic scale, the model solid approximation averages these fluctuations out to obtain a constant energy level for each material.

References

Van de Walle, Chris G.; Martin, Richard M. (1986-10-15), "Theoretical calculations of heterojunction discontinuities in the Si/Ge system", Phys. Rev. B, 34 (8): 5621, Bibcode:1986PhRvB..34.5621V, doi:10.1103/PhysRevB.34.5621
Van de Walle, Chris G. (1989-01-15), "Band lineups and deformation potentials in the model-solid theory", Phys. Rev. B, 39 (3): 1871, Bibcode:1989PhRvB..39.1871V, doi:10.1103/PhysRevB.39.1871
Faist, Jérôme; Capasso, Federico; Sivco, Deborah L.; Hutchinson, Albert L.; Chu, Sung-Nee G.; Cho, Alfred Y. Cho (1998-02-09), "Short wavelength (λ~3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs", Appl. Phys. Lett., 72 (6): 680, Bibcode:1998ApPhL..72..680F, doi:10.1063/1.120843

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